unisonic technologies co., ltd utt100n06 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-509.a n-channel enhancement mode power mosfet ? description the utc utt100n06 is an n-channel enhancement mode power fet using utc?s advanced technology to provide customers with a minimum on-state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. ? features * fast switching speed * 100a, 60v, r ds(on) = 7m ? @ v gs =10v * work below 175c * 100% avalanche tested * improved dv/dt capability ? symbol ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing UTT100N06L-TA3-T utt100n06g-ta3-t to-220 g d s tube note: pin assignment: g: gate d: drain s: source UTT100N06L-TA3-T (1)packing type (2)package type (3)lead free (1) t: tube (2) ta3: to-220 (3) g: halogen free, l: lead free
utt100n06 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-509.a ? absolute maximum ratings (t j =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 60 v gate-source voltage v gss 20 v continuous i d 100 a drain current pulsed i dm 400 a avalanche energy single pulsed e as 875 mj peak diode recovery dv/dt dv/dt 6 v/ns power dissipation p d 100 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal characteristics parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1.5 c/w
utt100n06 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-509.a ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 60 v drain-source leakage current i dss v ds =60v, v gs =0v 10 a forward v gs =+20v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-20v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 1 3 v v gs =10v, i d =50a 7 m ? static drain-source on-state resistance r ds(on) v gs =4.5v, i d =40a 10 m ? dynamic parameters input capacitance c iss 12900 pf output capacitance c oss 1060 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 700 pf switching parameters total gate charge q g 500 nc gate to source charge q gs 50 nc gate to drain charge q gd v gs =10v, v ds =30v, i d =100a 33 nc turn-on delay time t d(on) 90 ns rise time t r 130 200 ns turn-off delay time t d(off) 768 ns fall-time t f v dd =30v, vgs=10v, i d P 100a, r g =0.4 ? 280 420 ns transconductance g fs v ds =15v, i d =30a 30 s source- drain diode ratings and characteristics maximum body-diode continuous current i s 100 a maximum body-diode pulsed current i sm 400 a drain-source diode forward voltage v sd i s =100a, v gs =0v 1.0 1.5 v resistance of gate r g 0.65 1.3 2 ? utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior wr itten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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